HZDR Innovation GmbH
Ion irradiation of power semiconductors by modern MV accelerators to improve switching behavior and to reduce power loss for electromobility
- Stage $1M in TTM Revenue
- Industry Electronics / Instrumentation
- Location Dresden St, Detroit, MI, US
- Currency EUR
- Founded October 2011
- Employees 25
- Website hzdr-innovation.de
Company Summary
We realize commercial ion irradiation using modern accelerators. Power semiconductors play a key role in future development of regenerative energy production and energy efficient electric powered mobility. Defect engineering in power devices by high energy ion irradiation improves switching behavior and decreases power loss of diodes, thyristors, IGBT or power MOSFET. Our customers are power semiconductor fabs worldwide.
Team
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Andreas KolitschProf. Dr.rer.nat.1967 Studies of chemistry, Technical University Bergakademie Freiberg
1973 diploma thesis
1973 Researcher at Academy of Sciences of the GDR in Rossendorf
1977 Researcher at Nuclear Research Centre Rossendorf
1980 PhD
1993 Researcher at Institute of Ion Beam Physics and Materials Research
2006 Head of Ion Technology division
2008 Professor at STU Bratislava
2011 General Manager of HZDR Innovation -
Beate-Victoria Ermisch1993-1998 Studies law, Technical University of Dresden
1998 Assistant for Legal, GWT-TUD GmbH
2000 Executive Assistant, GWT-TUD GmbH
2000 Studies business administration , work accompanying
2005 diploma thesis
2008 Authorized Signatory and Head of Saxon Patent – Exploitation Agency
2011 General Manager of HZDR Innovation GmbH
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