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9257ad73 8eef 48b2 96c4 af128d987730


Key source of price/performance leading cubic Silicon Carbide (3C-SiC) wafers for global, $Billion+ power electronics device manufacturers.

  • Stage Product In Development
  • Industry Clean Technology
  • Location Boulder, CO, USA
  • Currency USD
  • Employees 4

Company Summary

Manufacture and sell high volumes of 4”, 6” and 8” cubic Silicon Carbide (3C-SiC) substrates to the fast growing (39% CAGR, $100+ million today growing to $1 Billion by 2020) power electronics device manufacturers who are serving the EV/HEV, PFC, Motor AC Drive, Smart Grid Power and Ships/Vessels marketplaces. Become the world’s major source for price/performance leading 3C-SiC substrates. Patent No. US 8,409,351 B2 issued on Apr. 2, 2013.


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    Robert Goodman
    President & CEO

    Thirty-three plus years of high technology related management experience including seventeen years as President & CEO of multiple technology firms. B.S. Engineering, United States Military Academy; MBA, St. Edwards University.

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    Bart Van Zeghbroeck, Ph. D.
    Chief Technology Officer

    Ph.D. Electrical Engineering, University of Colorado at Boulder Professor, University of Colorado at Boulder, Colorado. Director, Colorado Nanofabrication Laboratory (CNL) and Nanomaterials Characterization Facility (NCF). Formerly with IBM, NIST, PowerSicel, MicroSemi, PowerSicel Inc. Founder and Chief Technology Officer Microsemi Corp. Director, Boulder Advanced Technology

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    Michael Cromar, Ph. D.
    Vice President of Operations

    B.S. Physics, Stanford University; Ph.D. Physics, University of Oregon, extensive experience in wafer process techniques and the development of cutting edge microelectronic devices.

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    Josh Robbins, Ph. D.

    Ph.D. in chemical engineering, Colorado School of Mines, CEO and co-founder of SiC Systems, President CMD Research, Process development engineer at Texas Instruments.


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    Paul Gross at Gross Hartman
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    Diane Wightman

Previous Investors

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    Infield Capital
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    Angel Investors