Bandgap Semiconductor

We are working to develop novel new technology and related Intellectual Property for GaN on Silicon compound semiconductor devices for LEDs, Solar, HEMTs, etc.

  • Stage Prototype Ready
  • Industry Semiconductors
  • Location Noblesville, IN, US
  • Currency USD
  • Founded January 2013
  • Employees 3
  • Website bandgapsemiconductor.com

Company Summary

The GaN on Silicon devices we are currently working on include Light Emitting Diodes (LEDs), Solar Photovoltaic Cells, and High Electron Mobility Transistors (HEMTs). We are working towards developing our first samples related to LEDs with the DOE, ORNLs, and others. We have patent pending Utility patents for Method/Device for Trench High Electron Mobility Transistors (THEMTs), US2014/0367695A1 / WO2014205003 and additional device types.

Team

  • Stephen Barlow
    Chief Technology Officer

    Semiconductor Design / Development: BCD/Bipolar ASIC's, and HV Power Discretes for various Automotive applications. Co-patents:5,411,896 Method of Making Supra-Passivant Grid 5/02/95 - 5,959,345 Edge Termination for Zener Clamped Power Device 9/28/99 - 6,011,280 IGBT Power Device with Improved Resistance to Power Pulses 1/04/00 - 6,476,480 Press-fit IC Power Package and Method Therefor 11/05/02
    FA Engineer at Crane Naval Weapons Support Center

Starting a startup?

Join the world's largest startup network for guidance, tools, and fundraising opportunities.

Get Started for Free